Engineering the interface between the perovskite absorber and the charge-transporting layers has become an important method for improving the charge extraction and open-circuit voltage (VOC) of hybrid ...

We present InAIN/GaN-on-Si HEMTs with a 26 nm intrinsic GaN (iGaN) channel and a carbon-doped (cGaN) buffer separated by a thin $8 \\mathrm{~nm} \\mathrm{In}_{0.12}$ GaN back barrier and a buried ...