Aesolar and Fraunhofer CSP are developing segmented solar modules optimised for rooftops with partial shading.

The 650V IGBTs reduce losses, increase solar inverter efficiency by 15%, withstand heat and humidity, and enhance reliability ...

Abstract: This paper attempts to fulfill the need for a quantitative analysis of the microwave equivalent steady state circuit parameters of the reverse biased PIN diode as a function of the process ...

So, the simplest way to protect a system from a reverse polarity is by using a standard or Schottky diode because the diode will only conduct current when the correct polarity is applied to its ...

In an Si-based MOSFET, reverse recovery losses occur due to the body diode located at the P- or N-channel junction. The losses are generated when the MOSFET transitions from forward bias (conducting) ...

It concerns the time required to switch a diode from a forward-biased to a reverse-biased condition. The current transient can be separated into two phases: 1) the constant current phase during which ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a ...

Another advantage of GaN power devices lies in their lack of internal body diodes. Without these components, the devices can avoid reverse-recovery losses, enabling very fast switching speeds ...

The process is carried out after the firing of the metallization paste and involves scanning a laser across a crystalline silicon cell while it is under reverse bias. The result is that free ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...

For decades, men, straight people and White people were often held to a higher legal standard when bringing workplace bias claims than ... ruling could spur more reverse discrimination complaints ...