NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the ...

A squishy, layered material that dramatically transforms under pressure could someday help computers store more data with ...

This paper presents a Seven-transistor SRAM cell intended for the advanced microprocessor. A low power write scheme, which reduces SRAM power by using seven-transistor sense-amplifying memory cell, ...

Intel said that the 18A production line powering its upcoming Panther Lake PC processors is ready to go, and offered a sneak ...

Intel's new roadmap; EU chip plan needs work; RISC-V boost; UK IC workforce study; materials and wafer shipments; on-chip PDN ...

A squishy, layered material that dramatically transforms under pressure could someday help computers store more data with less energy. That's according to a new study that shows a hybrid zinc ...

Researchers at Fudan University have announced a breakthrough in flash memory with what they claim is the fastest device ever created.

A new technical paper titled “An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures” was published by researchers at Forschungszentrum Jülich, RWTH Aachen ...

Those changes could make it a strong candidate for phase change memory, a type of ultra-fast ... Using a diamond anvil cell—a device that can apply extreme pressure—and the new X-ray system ...

In an article by senior BBC Asia correspondent Suranjana Tewari titled US-China Chip War: America is Winning, the author argues that the fight for dominance in the semiconductor sector will reshape ...

Intel also offered a sneak peek at its 14A process, the next-generation manufacturing technology, which will include “turbo cells” for ... “gate all around” transistor, as well as PowerVia ...

Innovations in Analog Memory and Architecture - Artificial Intelligence (AI) is undergoing a significant transformation, driven by advancements in algorithms ...