NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM ...

This operational principle is key to processing binary code (0 signifies blocked current, 1 allows current to pass through) in logic circuits including inverters, gates, adders, and memory cells.

Moreover, the team built a two-transistor cell capable of operating either in a neuron or a synaptic regime, which the researchers have called "Neuro-Synaptic Random Access Memory," or NS-RAM.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the ...

Another form of silicon-based semiconductor memory is the non-volatile memory ... the explosive growth in consumer electronics such as cell phones and digital cameras. Once again, silicon ...

This paper presents a Seven-transistor SRAM cell intended for the advanced microprocessor. A low power write scheme, which reduces SRAM power by using seven-transistor sense-amplifying memory cell, ...

A new technical paper titled “An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures” was published by researchers at Forschungszentrum Jülich, RWTH Aachen ...

RAM consists of a grid of memory cells, each capable of storing a small amount of data ... It stores each bit of data using a transistor and a capacitor. The capacitor holds a charge to represent a 1 ...

Capacitorless DRAM delivers long retention, high density and energy savings, paving the way for compact 3D memory integration ...