The confined etchant layer technique has been applied to achieve effective three-dimensional (3D) micromachining on n-GaAs and p-Si. This technique operates via an indirect electrochemical process and ...

One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in ...

In this paper, we report the direct growth and characterization of a mid-wave infrared InAs/GaSb type-II superlattice n-B-p photodetector on a GaAs substrate. The design consists of an n-doped contact ...

Buffer-free growth of GaSb on GaAs using interfacial misfit (IMF) layers may significantly improve the performance of antimonide-based emitters operating between 1.6 and 3 mum by integrating III-As ...

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