NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the ...

NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM ...

A squishy, layered material that dramatically transforms under pressure could someday help computers store more data with ...

This paper presents a Seven-transistor SRAM cell intended for the advanced microprocessor. A low power write scheme, which reduces SRAM power by using seven-transistor sense-amplifying memory cell, ...

Intel said that the 18A production line powering its upcoming Panther Lake PC processors is ready to go, and offered a sneak ...

Intel's new roadmap; EU chip plan needs work; RISC-V boost; UK IC workforce study; materials and wafer shipments; on-chip PDN ...

A new technical paper titled “An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures” was published by researchers at Forschungszentrum Jülich, RWTH Aachen ...

A squishy, layered material that dramatically transforms under pressure could someday help computers store more data with less energy. That's according to a new study that shows a hybrid zinc ...

Those changes could make it a strong candidate for phase change memory, a type of ultra-fast ... Using a diamond anvil cell—a device that can apply extreme pressure—and the new X-ray system ...

Intel also offered a sneak peek at its 14A process, the next-generation manufacturing technology, which will include “turbo cells” for ... “gate all around” transistor, as well as PowerVia ...

Innovations in Analog Memory and Architecture - Artificial Intelligence (AI) is undergoing a significant transformation, driven by advancements in algorithms ...