NEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM ...

A new technical paper titled “An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures” was published by researchers at Forschungszentrum Jülich, RWTH Aachen ...

This operational principle is key to processing binary code (0 signifies blocked current, 1 allows current to pass through) in logic circuits including inverters, gates, adders, and memory cells.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash memory and 3D DRAM, announced today the ...

Moreover, the team built a two-transistor cell capable of operating either in a neuron or a synaptic regime, which the researchers have called "Neuro-Synaptic Random Access Memory," or NS-RAM.

This paper presents a Seven-transistor SRAM cell intended for the advanced microprocessor. A low power write scheme, which reduces SRAM power by using seven-transistor sense-amplifying memory cell, ...

Capacitorless DRAM delivers long retention, high density and energy savings, paving the way for compact 3D memory integration ...

Another form of silicon-based semiconductor memory is the non-volatile memory ... the explosive growth in consumer electronics such as cell phones and digital cameras. Once again, silicon ...

or some other type of configurable solid-state memory is just scratching the surface of what it might be possible to get integrated circuits and their transistors to do. This team has created a ...