[Hot Item] Semiconductor Wafer Cutting Machine for Si GaAs GaN Sic Wafer Stealth Dicing

11.9. A GaAs wafer with a thin N-type epitaxial layer is measured witha 6-contact Hall structure as shown in Fig. 11.17 whose criticaldimensions are ℓ = 200 µm and w = 50 µm. For a bias currentof 1.00 mA, the measured voltages are Vp = 1.42 V and, with amagnetic field of 0.6 Tesla, VH = 93.7 mV.(a) What is the sheet resistance Rs of the conductive layer?(b) What is the electron mobility ?(c) What is the surface electron density ns?

HVG Wafer Grinder Series